JPS632435Y2 - - Google Patents
Info
- Publication number
- JPS632435Y2 JPS632435Y2 JP1983201899U JP20189983U JPS632435Y2 JP S632435 Y2 JPS632435 Y2 JP S632435Y2 JP 1983201899 U JP1983201899 U JP 1983201899U JP 20189983 U JP20189983 U JP 20189983U JP S632435 Y2 JPS632435 Y2 JP S632435Y2
- Authority
- JP
- Japan
- Prior art keywords
- tube
- wafer
- reaction tube
- wall protection
- wall
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Chemical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20189983U JPS60113368U (ja) | 1983-12-30 | 1983-12-30 | 化学的気相付着装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP20189983U JPS60113368U (ja) | 1983-12-30 | 1983-12-30 | 化学的気相付着装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS60113368U JPS60113368U (ja) | 1985-07-31 |
JPS632435Y2 true JPS632435Y2 (en]) | 1988-01-21 |
Family
ID=30764113
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP20189983U Granted JPS60113368U (ja) | 1983-12-30 | 1983-12-30 | 化学的気相付着装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS60113368U (en]) |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5436063A (en) * | 1977-08-24 | 1979-03-16 | Kubota Ltd | Method of removing nitrogen from filthy water |
-
1983
- 1983-12-30 JP JP20189983U patent/JPS60113368U/ja active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS60113368U (ja) | 1985-07-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3040212B2 (ja) | 気相成長装置 | |
JP2002508294A (ja) | 多結晶シリコン棒製造用化学的蒸気析着方式 | |
US3484311A (en) | Silicon deposition process | |
JPS62263629A (ja) | 気相成長装置 | |
JPH09246192A (ja) | 薄膜気相成長装置 | |
JPH0377655B2 (en]) | ||
JPS632435Y2 (en]) | ||
JPH0447955Y2 (en]) | ||
JP2003203867A (ja) | 気相成長方法及び気相成長装置 | |
JPS6359533B2 (en]) | ||
JPH1050615A (ja) | 枚葉式気相成長装置 | |
JPS6168393A (ja) | ホツトウオ−ル形エピタキシヤル成長装置 | |
JPH11240794A (ja) | エピタキシャル成長装置 | |
JPH0345957Y2 (en]) | ||
JPH0214523A (ja) | プラズマ処理方法 | |
JPS6126217A (ja) | 気相成長装置 | |
JPS6357775A (ja) | Cvd薄膜形成装置 | |
JPS62158867A (ja) | Cvd薄膜形成装置 | |
JPH0562912A (ja) | 気相成長装置及び装置内のクリーニング方法 | |
WO1999043875A1 (fr) | Appareil de croissance epitaxiale | |
JPH0413853B2 (en]) | ||
JPS62238366A (ja) | Cvd薄膜形成装置 | |
JPS6389668A (ja) | 気相反応装置および該装置の制御方法 | |
JPH04354120A (ja) | 気相エピタキシャル成長装置 | |
JPS61251119A (ja) | 化学気相成長方法 |